Samsung is introducing new technologies into the NAND flash market at a very rapid pace, and it seems that they are not about to slow down just yet. Today Samsung announced that they have developed the world’s first 40nm, 32Gb NAND flash memory module. The new memory devices currently allow for 32GB and 64GB of space.

The new memory devices are based Samsung’s Charge Trap Flash architecture, which plays an essential part in the higher capacities. The CTF architecture was developed after years of research by the Samsung Semiconductor R&D department. It was first presented on paper at the at the 2003 International Electron Devices Meeting. The new architecture is said to significantly reduce inter-cell noise levels.

These new NAND flash memory modules will probably start appearing on the market very soon. As can be expected, the technology will most likely be integrated into portable consumer electronic devices as soon as manufacturers can get their hands on the modules. Personally, we are most interested to see how this new technology will play a role in portable notebooks.

Samsung went on to predict that 20nm NAND devices would be coming out soon.